Hybrid <scp>2D</scp> / <scp>3D</scp> Graphitic Carbon Nitride‐Based High‐Temperature Position‐Sensitive Detector

Ultraviolet position-sensitive detectors (PSDs) are expected to undergo harsh environments, such as high temperatures, for a wide variety of applications in military, civilian, and aerospace. However, no report on relevant PSDs operating at temperatures can be found up now. Herein, we design new 2D/3D graphitic carbon nitride (g-C3N4)/gallium (GaN) hybrid heterojunction construct the ultraviolet high-temperature-resistant PSD. The g-C3N4/GaN PSD exhibits position sensitivity 355 mV mm−1, rise/fall response time 1.7/2.3 ms, nonlinearity 0.5% room temperature. ultralow formation energy −0.917 eV atom−1 has been obtained via thermodynamic phase stability calculations, which endows g-C3N4 with robust against heat. By merits strong built-in electric field thermo-stability g-C3N4, delivers an excellent angle detection 315 mm−1 1.4%, respectively, repeatability temperature 700 K, outperforming most other counterparts even commercial silicon-based devices. This work unveils high-temperature PSD, pioneers path constructing g-C3N4-based harsh-environment-tolerant optoelectronic